Invention Grant
US08345389B2 Magnetoresistive element utilizing a peltier effect junction of Au and CuNi to cool the element
有权
使用Au和CuNi的珀耳帖效应结的磁阻元件来冷却元件
- Patent Title: Magnetoresistive element utilizing a peltier effect junction of Au and CuNi to cool the element
- Patent Title (中): 使用Au和CuNi的珀耳帖效应结的磁阻元件来冷却元件
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Application No.: US12879376Application Date: 2010-09-10
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Publication No.: US08345389B2Publication Date: 2013-01-01
- Inventor: Hiromi Yuasa , Shuichi Murakami , Yoshihiko Fuji , Hideaki Fukuzawa
- Applicant: Hiromi Yuasa , Shuichi Murakami , Yoshihiko Fuji , Hideaki Fukuzawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-065226 20100319
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, a first metal layer, a second metal layer, a first electrode, and a second electrode. The nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The first metal layer includes Au and is provided so that the first ferromagnetic layer is sandwiched between the nonmagnetic layer and the first metal layer. The second metal layer includes a CuNi alloy, and is provided so that the first metal layer is sandwiched between the first ferromagnetic layer and the second metal layer. In addition, magnetization of either one of the first ferromagnetic layer and the second ferromagnetic layer is fixed in a direction. Magnetization of the other is variable in response to an external field. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a half metal.
Public/Granted literature
- US20110228427A1 MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING/REPRODUCING APPARATUS Public/Granted day:2011-09-22
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