Invention Grant
US08345390B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device
有权
CPP型结构和磁盘装置中的磁阻效应元件
- Patent Title: Magnetoresistive effect element in CPP-type structure and magnetic disk device
- Patent Title (中): CPP型结构和磁盘装置中的磁阻效应元件
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Application No.: US12379625Application Date: 2009-02-26
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Publication No.: US08345390B2Publication Date: 2013-01-01
- Inventor: Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
- Applicant: Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
Public/Granted literature
- US20100214701A1 Magnetoresistive effect element in cpp-type structure and magnetic disk device Public/Granted day:2010-08-26
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