Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12569416Application Date: 2009-09-29
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Publication No.: US08345401B2Publication Date: 2013-01-01
- Inventor: Masashi Fujita
- Applicant: Masashi Fujita
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-254944 20080930
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
To provide a highly reliable semiconductor device (an RF tag) which operates normally even when a communication distance is extremely short, a protection circuit (a limiter circuit) for protecting an element which forms a semiconductor device (an RF tag) capable of wirelessly communicating data is provided. When the DC power supply potential which is generated in a rectifier circuit is equal to or greater than a predetermined value (a reference value), the protection circuit is made to operate, and the value of the generated DC power supply potential is reduced. On the other hand, when the DC power supply potential which is generated in the rectifier circuit is equal to or less than the predetermined value (reference value), the protection circuit is made not to operate, and the value of the generated DC power supply potential is used without change.
Public/Granted literature
- US20100079921A1 Semiconductor Device Public/Granted day:2010-04-01
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