A method for manufacturing resistive memory includes depositing a first conductive material layer on a substrate; etching the first conductive material layer to form a first signal line with a first surface; forming a memory material layer with a second surface coupled to the first signal line via the second surface contacting the first surface; depositing a second conductive material layer coupled to the memory material layer; etching the second conductive material layer to form a second signal line, wherein the area of the second surface is substantially larger or equal to the area of the overlapping region of the first signal line and the second signal line.