Invention Grant
US08345465B2 Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage device 有权
可变电阻元件的驱动方法,可变电阻元件的初始化方法和非易失性存储器件

Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage device
Abstract:
A method of driving a variable resistance element includes: a writing step performed by applying a writing voltage pulse having a first polarity to a variable resistance layer to change a resistance state of the layer from high to low; and an erasing step performed by applying an erasing voltage pulse having a second polarity to the layer to change the state from low to high. Here, |Vw1|>|Vw2| where Vw1 represents a voltage value of the writing voltage pulse for first to N-th writing steps (N≧1) and Vw2 represents a voltage value of the writing voltage pulse for (N+1)-th and subsequent writing steps, and |Ve1|>|Ve2| where Ve1 represents a voltage value of the erasing voltage pulse for first to M-th erasing steps (M≧1) and Ve2 represents a voltage value of the erasing voltage pulse for (M+1)-th and subsequent erasing steps. The (N+1)-th writing step follows the M-th erasing step.
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