Invention Grant
- Patent Title: Magneto-resistance element and semiconductor memory device including the same
- Patent Title (中): 磁阻元件和包括其的半导体存储器件
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Application No.: US12899843Application Date: 2010-10-07
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Publication No.: US08345471B2Publication Date: 2013-01-01
- Inventor: Ha Chang Jung
- Applicant: Ha Chang Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magneto-resistance element is provided. The magneto-resistance element includes an underlying layer including a main metal selected from electrically conductive metals and an auxiliary metal selected from transition metals, a first magnetic layer stacked on the underlying layer, an insulation layer stacked on the first magnetic layer, and a second magnetic layer stacked on the insulation layer.
Public/Granted literature
- US20120087179A1 MAGNETO-RESISTANCE ELEMENT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2012-04-12
Information query
