Invention Grant
- Patent Title: Use of emerging non-volatile memory elements with flash memory
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Application No.: US13031966Application Date: 2011-02-22
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Publication No.: US08345478B2Publication Date: 2013-01-01
- Inventor: Ramin Ghodsi
- Applicant: Ramin Ghodsi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C16/00
- IPC: G11C16/00

Abstract:
Memory devices and methods of operating memory devices are provided, such as those that involve a memory architecture that replaces typical static and/or dynamic components with emerging non-volatile memory (NV) elements. The emerging NV memory elements can replace conventional latches, can serve as a high speed interface between a flash memory array and external devices and can also be used as high performance cache memory for a flash memory array.
Public/Granted literature
- US20110141813A1 USE OF EMERGING NON-VOLATILE MEMORY ELEMENTS WITH FLASH MEMORY Public/Granted day:2011-06-16
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