Invention Grant
US08345483B2 System and method for addressing threshold voltage shifts of memory cells in an electronic product
有权
用于解决电子产品中存储单元的阈值电压偏移的系统和方法
- Patent Title: System and method for addressing threshold voltage shifts of memory cells in an electronic product
- Patent Title (中): 用于解决电子产品中存储单元的阈值电压偏移的系统和方法
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Application No.: US13011706Application Date: 2011-01-21
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Publication No.: US08345483B2Publication Date: 2013-01-01
- Inventor: Frederick C. Neumeyer , Greg Yancey , Pedro Sanchez , Iftekhar Rahman
- Applicant: Frederick C. Neumeyer , Greg Yancey , Pedro Sanchez , Iftekhar Rahman
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Methods and systems for addressing threshold voltage shifts of memory cells. A method includes reading a pattern of data from a first plurality of memory cells, comparing the read of the pattern of data with a known pattern of data using a reference, and if the read of the pattern of data and the known pattern of data do not match, adjusting the reference to find a reference level that results in a matching of a read of the pattern of data and the known pattern of data. Thereafter, trim sector data is read into a second plurality of memory cells using the adjusted reference level.
Public/Granted literature
- US20120188820A1 SYSTEM AND METHOD FOR ADDRESSING THRESHOLD VOLTAGE SHIFTS OF MEMORY CELLS IN AN ELECTRONIC PRODUCT Public/Granted day:2012-07-26
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