Invention Grant
- Patent Title: Programming a memory device to increase data reliability
- Patent Title (中): 编程存储器件以增加数据可靠性
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Application No.: US13305906Application Date: 2011-11-29
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Publication No.: US08345486B2Publication Date: 2013-01-01
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
Methods for programming a memory array, memory devices, and memory systems are disclosed. In one such method, the target reliability of the data to be programmed is determined. The relative reliability of different groups of memory cells of the memory array is determined. The data is programmed into the group of memory cells of the array having a relative reliability corresponding to the target reliability.
Public/Granted literature
- US20120075933A1 PROGRAMMING A MEMORY DEVICE TO INCREASE DATA RELIABILITY Public/Granted day:2012-03-29
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