Invention Grant
- Patent Title: Method of setting read voltage minimizing read data errors
- Patent Title (中): 设置读取电压最小化读取数据错误的方法
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Application No.: US12774814Application Date: 2010-05-06
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Publication No.: US08345487B2Publication Date: 2013-01-01
- Inventor: Yong June Kim , Jae Hong Kim , Jun Jin Kong , Hong Rak Son , Seung-Hwan Song
- Applicant: Yong June Kim , Jae Hong Kim , Jun Jin Kong , Hong Rak Son , Seung-Hwan Song
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0043825 20090520
- Main IPC: G11C11/413
- IPC: G11C11/413
Abstract:
A method setting a read voltage to minimize data read errors in a semiconductor memory device including multi-bit memory cells. In the method, a read voltage associated with a minimal number of read data error is set based on a statistic value of a voltage distribution corresponding to each one of a plurality of voltage states.
Public/Granted literature
- US20100296350A1 METHOD OF SETTING READ VOLTAGE MINIMIZING READ DATA ERRORS Public/Granted day:2010-11-25
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