Invention Grant
US08345495B2 Test circuit, nonvolatile semiconductor memory appratus using the same, and test method
有权
测试电路，使用相同的非易失性半导体存储器，以及测试方法
- Patent Title: Test circuit, nonvolatile semiconductor memory appratus using the same, and test method
- Patent Title (中): 测试电路，使用相同的非易失性半导体存储器，以及测试方法
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Application No.: US12845659Application Date: 2010-07-28
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Publication No.: US08345495B2Publication Date: 2013-01-01
- Inventor: Jung Hyuk Yoon , Yoon Jae Shin
- Applicant: Jung Hyuk Yoon , Yoon Jae Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0115741 20091127
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A test circuit of a nonvolatile semiconductor memory apparatus includes a first switching unit, a second switching unit, and a third switching unit. The first switching unit is configured to selectively interrupt application of a pumping voltage for a sense amplifier to a sense amplifier input node. The second switching unit is configured to selectively decouple the sense amplifier input node and a sub input/output node. The sub input/output node is coupled with a data storage region. The third switching unit is configured to selectively connect a voltage applying pad and the sense amplifier input node.
Public/Granted literature
- US20110128805A1 TEST CIRCUIT, NONVOLATILE SEMICONDUCTOR MEMORY APPRATUS USING THE SAME, AND TEST METHOD Public/Granted day:2011-06-02
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