Invention Grant
US08345496B2 Memory test apparatus and testing method 有权
记忆测试仪器及测试方法

  • Patent Title: Memory test apparatus and testing method
  • Patent Title (中): 记忆测试仪器及测试方法
  • Application No.: US12990983
    Application Date: 2009-05-07
  • Publication No.: US08345496B2
    Publication Date: 2013-01-01
  • Inventor: Takashi Nakamura
  • Applicant: Takashi Nakamura
  • Applicant Address: JP Tokyo
  • Assignee: Advantest Corporation
  • Current Assignee: Advantest Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Ladas & Parry, LLP
  • Priority: JP2008-123353 20080509
  • International Application: PCT/JP2009/002011 WO 20090507
  • International Announcement: WO2009/136503 WO 20091112
  • Main IPC: G11C29/00
  • IPC: G11C29/00
Memory test apparatus and testing method
Abstract:
A refresh control circuit receives an interrupt signal, which is a request to refresh DRAM (Dynamic Random Access Memory) and which is asserted at predetermined timings. The refresh control circuit counts the number of times the interrupt signal is asserted, and asserts an interrupt subroutine start signal, which is an instruction to refresh the DRAM, in an idle state in which the DRAM is accessible from an external circuit, for a number of times that is equal to the number of times thus counted. When the interrupt subroutine start signal is asserted, a refresh circuit executes a predetermined interrupt subroutine, and supplies a refresh pattern to the DRAM.
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