Invention Grant
- Patent Title: Internal bypassing of memory array devices
- Patent Title (中): 内存阵列设备的内部旁路
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Application No.: US12822058Application Date: 2010-06-23
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Publication No.: US08345497B2Publication Date: 2013-01-01
- Inventor: Paul A. Bunce , John D. Davis , Diana M. Henderson , Jigar J. Vora
- Applicant: Paul A. Bunce , John D. Davis , Diana M. Henderson , Jigar J. Vora
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent William A. Kinnaman, Jr.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An output control circuit for a memory array includes a latched output node precharged to a first logic state prior to both a read and write operation; first logic that couples memory cell data from a memory read path to the output node during the read operation, the first logic controlled by a timing signal; second logic that internally bypasses the memory read path during a write operation by decoupling it from the output node, such that a logical derivative of write data written to the memory array is also coupled to the output node, the second logic also controlled by the timing signal; and wherein a transition of the output node from the first logic state to a second logic state during the write operation occurs within a time range as that of the same transition during the read operation.
Public/Granted literature
- US20110317505A1 INTERNAL BYPASSING OF MEMORY ARRAY DEVICES Public/Granted day:2011-12-29
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