Invention Grant
- Patent Title: Sense amplifier
- Patent Title (中): 感应放大器
-
Application No.: US13029632Application Date: 2011-02-17
-
Publication No.: US08345498B2Publication Date: 2013-01-01
- Inventor: Sergiy Romanovskyy , Muhammad Nummer
- Applicant: Sergiy Romanovskyy , Muhammad Nummer
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A sense amplifier includes a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor. The first PMOS transistor, the second PMOS transistor, the first NMOS transistor, and the second NMOS transistor form cross coupled sensing pairs. The third PMOS and the fourth PMOS transistors serve as compensation transistors. The third NMOS and the fourth NMOS transistors serve as sensing enabling transistors.
Public/Granted literature
- US20120213015A1 SENSE AMPLIFIER Public/Granted day:2012-08-23
Information query