Invention Grant
US08345500B2 Memory having a disabling circuit and method for disabling the memory
有权
具有禁用电路的存储器和用于禁止存储器的方法
- Patent Title: Memory having a disabling circuit and method for disabling the memory
- Patent Title (中): 具有禁用电路的存储器和用于禁止存储器的方法
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Application No.: US12912748Application Date: 2010-10-27
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Publication No.: US08345500B2Publication Date: 2013-01-01
- Inventor: Shih-Hsing Wang , Der-Min Yuan
- Applicant: Shih-Hsing Wang , Der-Min Yuan
- Applicant Address: TW Hsinchu
- Assignee: Etron Technology, Inc.
- Current Assignee: Etron Technology, Inc.
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu; Scott Margo
- Priority: TW99101644A 20100121
- Main IPC: G11C17/18
- IPC: G11C17/18

Abstract:
A memory with disabling circuit includes a memory matrix and a disabling circuit. The memory matrix includes a data input/output end and an output enable end. The disabling circuit includes a fuse and an output end. When the fuse is not blown, the disabling circuit transmits the signal of the data input/output end to the output end according to the signal of the output enable end. When the fuse is blown, the disabling circuit generates a tri-state to the output end. Therefore, external circuits cannot perform actions of reading or writing to access the memory matrix.
Public/Granted literature
- US20110176381A1 MEMORY HAVING A DISABLING CIRCUIT AND METHOD FOR DISABLING THE MEMORY Public/Granted day:2011-07-21
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