Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13100939Application Date: 2011-05-04
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Publication No.: US08345506B2Publication Date: 2013-01-01
- Inventor: Masahisa Iida
- Applicant: Masahisa Iida
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-300972 20081126
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
In order to latch and store a word line reset level voltage (negative voltage) which is set during reset operation, a word line driver includes PMOS transistors and NMOS transistors. The word line driver further includes a stress-reducing PMOS transistor and an NMOS transistor, and also a word line bias control circuit which controls and activates a supply bias during setting of a word line, start of resetting, and a reset period.
Public/Granted literature
- US20110205829A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-08-25
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