Invention Grant
- Patent Title: Semiconductor device and its testing method
- Patent Title (中): 半导体器件及其测试方法
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Application No.: US12883825Application Date: 2010-09-16
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Publication No.: US08346499B2Publication Date: 2013-01-01
- Inventor: Tadayuki Inamura , Masahiro Tozuka
- Applicant: Tadayuki Inamura , Masahiro Tozuka
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-216571 20090918
- Main IPC: G01R29/00
- IPC: G01R29/00

Abstract:
A semiconductor device 100 including an internal circuit 4 that operates based on an input pattern includes a clock driver 25 that generates an internal clock 7 based on a generated clock 6, a counter 23 that generates count data 28 by counting the generated clock 6, a nonvolatile storage device 22 that stores storage data 27 used in an IDDQ test, a comparator 24 that stops the generation of the internal clock 7 by the clock driver 25 when the count data 28 and the storage data 27 match each other, and a pseudo random number generation circuit 3 that supplies a pseudo random number 8 to the internal circuit 4 in synchronization with the internal clock 7.
Public/Granted literature
- US20110071786A1 SEMICONDUCTOR DEVICE AND ITS TESTING METHOD Public/Granted day:2011-03-24
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