Invention Grant
- Patent Title: Transforming metrology data from a semiconductor treatment system using multivariate analysis
- Patent Title (中): 使用多变量分析从半导体处理系统转换计量学数据
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Application No.: US13444746Application Date: 2012-04-11
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Publication No.: US08346506B2Publication Date: 2013-01-01
- Inventor: Vi Vuong , Junwei Bao , Yan Chen , Heiko Weichert , Sebastien Egret
- Applicant: Vi Vuong , Junwei Bao , Yan Chen , Heiko Weichert , Sebastien Egret
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Main IPC: G06F17/18
- IPC: G06F17/18
Abstract:
Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
Public/Granted literature
- US20120199287A1 TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS Public/Granted day:2012-08-09
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