Invention Grant
US08347029B2 Systems and methods for fast state modification of at least a portion of non-volatile memory
有权
用于对非易失性存储器的至少一部分进行快速状态修改的系统和方法
- Patent Title: Systems and methods for fast state modification of at least a portion of non-volatile memory
- Patent Title (中): 用于对非易失性存储器的至少一部分进行快速状态修改的系统和方法
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Application No.: US11966826Application Date: 2007-12-28
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Publication No.: US08347029B2Publication Date: 2013-01-01
- Inventor: Sanjeev N. Trika , Debra Hensgen , Han H. Chau , Michael Johnston
- Applicant: Sanjeev N. Trika , Debra Hensgen , Han H. Chau , Michael Johnston
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A method is provided for reducing the number of writes in a non-volatile memory (122). The method involves writing data in the non-volatile memory and determining a set of data from the data in the non-volatile memory to be written to a removable memory (126) that is operatively coupled to the non-volatile memory (e.g., a NAND memory). The method also involves writing the set of data to the removable memory (e.g., a hard disk) from the non-volatile memory. The method further involves writing a delineation marker (e.g., a sequence number) to the non-volatile memory specifying that the set of data has been written to the removable memory. Notably, the metadata of the data in the non-volatile memory comprises at least one marker set as a specific marker type (e.g., a valid marker and a dirty marker).
Public/Granted literature
- US20090172280A1 SYSTEMS AND METHODS FOR FAST STATE MODIFICATION OF AT LEAST A PORTION OF NON-VOLATILE MEMORY Public/Granted day:2009-07-02
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