Invention Grant
- Patent Title: Multi-plane type flash memory and methods of controlling program and read operations thereof
- Patent Title (中): 多平面型闪存及其程序的控制方法及其读取操作
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Application No.: US12474036Application Date: 2009-05-28
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Publication No.: US08347042B2Publication Date: 2013-01-01
- Inventor: Byoung Sung You
- Applicant: Byoung Sung You
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2005-0020169 20050310
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/28 ; G11C7/00 ; G11C7/18 ; G11C8/00

Abstract:
A multi-plane type flash memory device comprises a plurality of planes each including a plurality of memory cell blocks, page buffers each latching an input data bit to be output to its corresponding plane or latching an output data bit to be received from the corresponding plane, cache buffers each storing an input or output data bits in response to one of cache input control signals and each transferring the stored data bit to the page buffer or an external device in response to one of cache output control signals, and a control logic circuit generating the cache input and output control signals in response to command and chip enable signals containing plural bits. The program and read operations for the plural planes are conducted simultaneously in response to the chip enable signal containing the plural bits, which increases an operation speed and data throughput processed therein.
Public/Granted literature
- US20090238005A1 MULTI-PLANE TYPE FLASH MEMORY AND METHODS OF CONTROLLING PROGRAM AND READ OPERATIONS THEREOF Public/Granted day:2009-09-24
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