Invention Grant
- Patent Title: Fabricating method of magnetoresistance sensor
- Patent Title (中): 磁阻传感器的制造方法
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Application No.: US13174758Application Date: 2011-06-30
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Publication No.: US08347487B2Publication Date: 2013-01-08
- Inventor: Fu-Tai Liou , Chih-Chien Liang , Chien-Min Lee
- Applicant: Fu-Tai Liou , Chih-Chien Liang , Chien-Min Lee
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: Voltafield Technology Corporation
- Current Assignee: Voltafield Technology Corporation
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agent Cheng-Ju Chiang
- Priority: TW100107197A 20110303
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00

Abstract:
A fabricating method of a magnetoresistance sensor is provided with cost effective and process flexibility features. Firstly, a substrate is provided. Then, at least one magnetoresistance structure and at least one bonding pad are formed over the substrate, wherein the bonding pad is electrically connected with the magnetoresistance structure. Then, a passivation layer is formed over the magnetoresistance structure and the bonding pad. Then, a magnetic shielding and concentrator structure is formed over the passivation layer at a location corresponding to the magnetoresistance structure. Finally, bonding pad openings is formed on the passivation layer by patterned polyimide, thereby exposing the bonding pad. After bonding pad was opened, the patterned polyimide can be removed or retained as an additional protection layer.
Public/Granted literature
- US20120222291A1 FABRICATING METHOD OF MAGNETORESISTANCE SENSOR Public/Granted day:2012-09-06
Information query
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