Invention Grant
- Patent Title: Transition fault testing for a non-volatile memory
- Patent Title (中): 非易失性存储器的转换故障测试
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Application No.: US12570261Application Date: 2009-09-30
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Publication No.: US08352813B2Publication Date: 2013-01-08
- Inventor: Chen He , Gary L. Miller
- Applicant: Chen He , Gary L. Miller
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Joanna G. Chiu; James L. Clingan, Jr.
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A method is for testing a non-volatile memory. A base data pattern is defined for a first pageset of the non-volatile memory. The non-volatile memory has a plurality of pages which comprise words. The base pattern is arranged so that each bitpair of a plurality of bitpairs that includes one of a group consisting of even bitpairs and odd bitpairs formed from all of the words exhibits all possible bitpair transitions during sequential accesses of the pages of the plurality of pages. The base pattern is stored in the first pageset. The pages of the plurality of pages of the first pageset are accessed sequentially.
Public/Granted literature
- US20110078521A1 TRANSITION FAULT TESTING FOR A VON-VOLATILE MEMORY Public/Granted day:2011-03-31
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