Invention Grant
- Patent Title: Apparatus and method for manufacturing quantum dot
- Patent Title (中): 用于制造量子点的装置和方法
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Application No.: US13126053Application Date: 2009-10-27
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Publication No.: US08354090B2Publication Date: 2013-01-15
- Inventor: Chang-soo Han , Sohee Jeong , Won-sik Seo
- Applicant: Chang-soo Han , Sohee Jeong , Won-sik Seo
- Applicant Address: KR Daejeon-si
- Assignee: Korea Institute of Machinery & Materials
- Current Assignee: Korea Institute of Machinery & Materials
- Current Assignee Address: KR Daejeon-si
- Agency: KED & Associates LLP
- Priority: KR10-2008-0105369 20081027
- International Application: PCT/KR2009/006228 WO 20091027
- International Announcement: WO2010/050727 WO 20100506
- Main IPC: C01B17/00
- IPC: C01B17/00 ; C01B19/04 ; B01J19/00 ; F28D21/00

Abstract:
Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.
Public/Granted literature
- US20110223097A1 Apparatus and method for manufacturing quantum dot Public/Granted day:2011-09-15
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