Invention Grant
US08354290B2 Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches
有权
超高分子金刚石薄膜具有优化的介电性能，适用于先进的RF MEMS电容开关
- Patent Title: Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches
- Patent Title (中): 超高分子金刚石薄膜具有优化的介电性能，适用于先进的RF MEMS电容开关
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Application No.: US13080255Application Date: 2011-04-05
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Publication No.: US08354290B2Publication Date: 2013-01-15
- Inventor: Anirudha V. Sumant , Orlando H. Auciello , Derrick C. Mancini
- Applicant: Anirudha V. Sumant , Orlando H. Auciello , Derrick C. Mancini
- Applicant Address: US IL Argonne
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Argonne
- Agency: Tolpin & Partners, PC
- Agent Thomas W. Tolpin
- Main IPC: H01L27/20
- IPC: H01L27/20
Abstract:
An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
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