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US08354296B2 Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same 有权
包括石墨烯纳米带的有序排列的半导体结构和电路及其形成方法

Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same
Abstract:
A semiconductor structure including an ordered array of parallel graphene nanoribbons located on a surface of a semiconductor substrate is provided using a deterministically assembled parallel set of nanowires as an etch mask. The deterministically assembled parallel set of nanowires is formed across a gap present in a patterned graphene layer utilizing an electric field assisted assembly process. A semiconductor device, such as a field effect transistor, can be formed on the ordered array of parallel graphene nanoribbons.
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