Invention Grant
- Patent Title: Semiconductor device fabrication method including formation of columnar electrodes having protrusion sections
- Patent Title (中): 包括形成具有突出部分的柱状电极的半导体器件制造方法
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Application No.: US12975624Application Date: 2010-12-22
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Publication No.: US08354302B2Publication Date: 2013-01-15
- Inventor: Tadashi Yamaguchi
- Applicant: Tadashi Yamaguchi
- Applicant Address: JP Tokyo
- Assignee: OKI Semiconductor Co., Ltd.
- Current Assignee: OKI Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, PLLC
- Priority: JP2005-300576 20051014
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor device includes a semiconductor chip having a plurality of electrode pads, and a rewiring pattern having a plurality of interconnects connected to the electrode pads and extending over insulation film. The semiconductor device includes a plurality of columnar electrodes each having a main body section and a protrusion section, and a sealing section having a top face having a height the same as the top faces of the protrusion sections. The semiconductor device includes solder balls formed on the protrusion sections and has a plurality of trenches in the sealing section. Each trench has a depth which reaches the boundary between the main body and protrusion of the electrode. The side faces of the protrusion section are exposed by the trenches. Each solder ball is electrically connected to the top and side faces of the protrusion section of each electrode.
Public/Granted literature
- US20110092022A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2011-04-21
Information query
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