Invention Grant
- Patent Title: Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate
- Patent Title (中): 导电层掩埋型基板，形成导电层掩埋型基板的方法以及使用导电层掩埋型基板制造半导体器件的方法
-
Application No.: US13221158Application Date: 2011-08-30
-
Publication No.: US08354308B2Publication Date: 2013-01-15
- Inventor: Pil-kyu Kang , Gil-heyun Choi , Dae-lok Bae , Byung-lyul Park , Dong-kak Lee
- Applicant: Pil-kyu Kang , Gil-heyun Choi , Dae-lok Bae , Byung-lyul Park , Dong-kak Lee
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0084182 20100830
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/84
Abstract:
A conductive layer buried-type substrate is disclosed. The substrate includes a silicon oxidation layer bonded to a supporting substrate, an adhesion promotion layer that is formed on the silicon oxidation layer and improves an adhesion between the silicon oxidation layer and a conductive layer, wherein the conductive layer is formed on the adhesion promotion layer and comprises a metal layer, and a single crystal semiconductor layer formed on the conductive layer.
Public/Granted literature
Information query
IPC分类:
