Invention Grant
- Patent Title: Semiconductor device fabrication method
- Patent Title (中): 半导体器件制造方法
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Application No.: US12860454Application Date: 2010-08-20
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Publication No.: US08354312B2Publication Date: 2013-01-15
- Inventor: Tsutomu Komatani
- Applicant: Tsutomu Komatani
- Applicant Address: JP Yokohama-shi, Kanagawa
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama-shi, Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-041345 20080222
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
The present invention is a method for fabricating a semiconductor device including the steps of: a first silicon nitride film having a refractive index of 2.2 or higher on a semiconductor layer made of a GaN- or InP-based semiconductor; forming, on the first silicon nitride film, a second silicon nitride film having a refractive index lower than that of the first silicon nitride; forming a source electrode and a drain electrode in areas in which the semiconductor layer is exposed; annealing the source electrode and the drain electrode in a state in which the first silicon nitride film and the second silicon nitride film are formed; and forming a gate electrode on the semiconductor layer between the source electrode and the drain electrode.
Public/Granted literature
- US20100317164A1 SEMICONDUCTOR DEVICE FABRICATION METHOD Public/Granted day:2010-12-16
Information query
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