Invention Grant
US08354332B2 Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys
有权
形成具有包含共晶合金的硼掺杂谐振器体的微电子机械谐振器的方法
- Patent Title: Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys
- Patent Title (中): 形成具有包含共晶合金的硼掺杂谐振器体的微电子机械谐振器的方法
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Application No.: US12570623Application Date: 2009-09-30
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Publication No.: US08354332B2Publication Date: 2013-01-15
- Inventor: Farrokh Ayazi , Ashwin Samarao
- Applicant: Farrokh Ayazi , Ashwin Samarao
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H02N11/00
- IPC: H02N11/00 ; H01L21/22
Abstract:
A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×1018 cm−3 and even greater than about 1×1019 cm−3, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.
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