Invention Grant
US08354339B2 Methods to form self-aligned permanent on-chip interconnect structures
有权
形成自对准永久性片上互连结构的方法
- Patent Title: Methods to form self-aligned permanent on-chip interconnect structures
- Patent Title (中): 形成自对准永久性片上互连结构的方法
-
Application No.: US12839697Application Date: 2010-07-20
-
Publication No.: US08354339B2Publication Date: 2013-01-15
- Inventor: Qinghuang Lin
- Applicant: Qinghuang Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
Methods of fabricating a self-aligned permanent on-chip interconnect structure are provided. In one embodiment, the method includes forming a patterned photoresist having at least one opening on a surface of a substrate. A dielectric sidewall structure is then formed on each sidewall of the patterned photoresist and within the at least one opening. A narrowed width opening is present between neighboring dielectric sidewall structures. The patterned photoresist is then removed and thereafter each dielectric sidewall structure is converted into a permanent patterned dielectric structure which is self-aligned and double patterned. At least an electrically conductive material is formed within the narrowed width openings.
Public/Granted literature
- US20120018891A1 METHODS TO FORM SELF-ALIGNED PERMANENT ON-CHIP INTERCONNECT STRUCTURES Public/Granted day:2012-01-26
Information query
IPC分类:
