Invention Grant
- Patent Title: Solid-state image device manufacturing method thereof, and image capturing apparatus with first and second stress liner films
- Patent Title (中): 固体摄像装置的制造方法以及具有第一和第二应力衬垫膜的摄像装置
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Application No.: US12656423Application Date: 2010-01-29
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Publication No.: US08354631B2Publication Date: 2013-01-15
- Inventor: Yasushi Tateshita
- Applicant: Yasushi Tateshita
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader Fishman & Grauer, PLLC
- Priority: JP2009-050131 20090304
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/70
Abstract:
A solid-state image device is provided which includes: a photoelectric conversion portion which obtains a signal charge by photoelectric conversion of incident light; a pixel transistor portion which outputs a signal charge generated by the photoelectric conversion portion; a peripheral circuit portion which is provided at the periphery of a pixel portion including the photoelectric conversion portion and the pixel transistor portion and which has an NMOS transistor and a PMOS transistor; a first stress liner film which has a compressive stress and which is provided on the PMOS transistor; and a second stress liner film which has a tensile stress and which is provided on the NMOS transistor. In the solid-state image device described above, the photoelectric conversion portion, the pixel transistor portion, and the peripheral circuit portion are provided in and/or on a semiconductor substrate.
Public/Granted literature
- US20100224766A1 Solid-state image device manufacturing method thereof, and image capturing apparatus Public/Granted day:2010-09-09
Information query
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