Invention Grant
US08354655B2 Method and system for controlling critical dimension and roughness in resist features
有权
用于控制抗蚀剂特征的临界尺寸和粗糙度的方法和系统
- Patent Title: Method and system for controlling critical dimension and roughness in resist features
- Patent Title (中): 用于控制抗蚀剂特征的临界尺寸和粗糙度的方法和系统
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Application No.: US13099432Application Date: 2011-05-03
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Publication No.: US08354655B2Publication Date: 2013-01-15
- Inventor: Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
- Applicant: Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/32
- IPC: H01J37/32
Abstract:
A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
Public/Granted literature
- US20120280140A1 METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES Public/Granted day:2012-11-08
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