A high efficiency light emitting diode with an ultraviolet light-emitting structure. The structure has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; a second layer with a second conductivity comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; and a light emitting quantum well region between said first layer and said second layer comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1. The diode also has a carrier bonded to said first layer and said second layer wherein said carrier has a thermal conductivity of at least 100 W/mK and said carrier is resistive between a bonding location of said first layer and a second bonding location of said second layer.