Invention Grant
- Patent Title: Solid-state pinch off thyristor circuits
- Patent Title (中): 固态夹断晶闸管电路
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Application No.: US12550574Application Date: 2009-08-31
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Publication No.: US08354690B2Publication Date: 2013-01-15
- Inventor: Robert J. Callanan , Sei-Hyung Ryu , Qingchun Zhang
- Applicant: Robert J. Callanan , Sei-Hyung Ryu , Qingchun Zhang
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L29/74
- IPC: H01L29/74
Abstract:
Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to receive a gate trigger current that, when the anode layer is positively biased relative to the cathode layer, causes the thyristor portion to latch into a conducting mode between the anode and the cathode. The device also includes a transistor portion formed on the thyristor portion, the transistor portion including a source, a drain and a transistor gate, the drain coupled to the cathode of the thyristor portion.
Public/Granted literature
- US20110049561A1 Solid-State Pinch Off Thyristor Circuits Public/Granted day:2011-03-03
Information query
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