Invention Grant
US08354699B2 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
有权
为CMOS成像器件像素提供具有比其它成像器件晶体管具有更低阈值电压的晶体管的方法和装置
- Patent Title: Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
- Patent Title (中): 为CMOS成像器件像素提供具有比其它成像器件晶体管具有更低阈值电压的晶体管的方法和装置
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Application No.: US13052731Application Date: 2011-03-21
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Publication No.: US08354699B2Publication Date: 2013-01-15
- Inventor: Howard E. Rhodes
- Applicant: Howard E. Rhodes
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of less than about 0.4 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.
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