Invention Grant
- Patent Title: Methods of forming and operating semiconductor device
- Patent Title (中): 半导体器件的形成和操作方法
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Application No.: US13087643Application Date: 2011-04-15
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Publication No.: US08354708B2Publication Date: 2013-01-15
- Inventor: Wook-Hyun Kwon , Byung-Gook Park , Yun-Heub Song , Yoon Kim
- Applicant: Wook-Hyun Kwon , Byung-Gook Park , Yun-Heub Song , Yoon Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee Address: KR Suwon-si, Gyeonggi-do KR Seoul
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0065120 20080704
- Main IPC: H01L29/792
- IPC: H01L29/792

Abstract:
Provided are a semiconductor device and a methods of forming and operating the semiconductor device. The semiconductor device may include active pillars extending from a semiconductor substrate and disposed two dimensionally disposed on the semiconductor substrate, upper interconnections connecting the active pillars along one direction, lower interconnections crossing the upper interconnections and disposed between the active pillars, word lines crossing the upper interconnections and disposed between the active pillars, and data storage patterns disposed between the word lines and the active pillars.
Public/Granted literature
- US20110194356A1 METHODS OF FORMING AND OPERATING SEMICONDUCTOR DEVICE Public/Granted day:2011-08-11
Information query
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