Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12461160Application Date: 2009-08-03
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Publication No.: US08354731B2Publication Date: 2013-01-15
- Inventor: Hiromichi Takaoka , Yoshitaka Kubota , Hiroshi Tsuda
- Applicant: Hiromichi Takaoka , Yoshitaka Kubota , Hiroshi Tsuda
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-207356 20080811
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
The semiconductor device includes: a substrate; an electric fuse that includes a lower-layer wiring formed on the substrate, a first via provided on the lower-layer wiring and connected to the lower-layer wiring, and an upper-layer wiring provided on the first via and connected to the first via, a flowing-out portion of a conductive material constituting the electric fuse being formed in a cut-off state of the electric fuse; and a heat diffusion portion that includes a heat diffusion wiring that is formed in the same layer as one of the upper-layer wiring and the lower-layer wiring and is placed on a side of the one of the upper-layer wiring and the lower-layer wiring, the heat diffusion portion being electrically connected to the one of the upper-layer wiring and the lower-layer wiring.
Public/Granted literature
- US20100032798A1 Semiconductor device Public/Granted day:2010-02-11
Information query
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