Invention Grant
- Patent Title: Structures including passivated germanium
- Patent Title (中): 结构包括钝化锗
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Application No.: US13072182Application Date: 2011-03-25
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Publication No.: US08354738B2Publication Date: 2013-01-15
- Inventor: Leonard Forbes , Kie Y. Ahn
- Applicant: Leonard Forbes , Kie Y. Ahn
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A passivated germanium surface that is a germanium carbide material formed on and in contact with the termanium material. An intermediate semiconductor device structure and a semiconductor device structure, each of which comprises the passivated germanium having germanium carbide material thereon, are also disclosed.
Public/Granted literature
- US20110169007A1 STRUCTURES INCLUDING PASSIVATED GERMANIUM Public/Granted day:2011-07-14
Information query
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