Invention Grant
- Patent Title: Light-emitting device
- Patent Title (中): 发光装置
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Application No.: US12265212Application Date: 2008-11-05
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Publication No.: US08354786B2Publication Date: 2013-01-15
- Inventor: Shunpei Yamazaki , Satoshi Seo , Mayumi Mizukami
- Applicant: Shunpei Yamazaki , Satoshi Seo , Mayumi Mizukami
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-26184 20010201
- Main IPC: H01L51/52
- IPC: H01L51/52

Abstract:
A light-emitting device includes a transistor over a substrate and an insulating film over the transistor. The light-emitting device further includes a wiring over the insulating film and a light-emitting element. The insulating film includes a first opening and a second opening, and the wiring is electrically connected to the transistor through the first opening. The light-emitting element is provided in the second opening, and includes a first electrode, a second electrode, and an organic compound layer provided between the first electrode and the second electrode.
Public/Granted literature
- US20090058285A1 Deposition Apparatus and Deposition Method Public/Granted day:2009-03-05
Information query
IPC分类: