Invention Grant
US08354858B2 Apparatus and method for hardening latches in SOI CMOS devices
有权
用于硬化SOI CMOS器件中的锁存器的装置和方法
- Patent Title: Apparatus and method for hardening latches in SOI CMOS devices
- Patent Title (中): 用于硬化SOI CMOS器件中的锁存器的装置和方法
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Application No.: US12987106Application Date: 2011-01-08
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Publication No.: US08354858B2Publication Date: 2013-01-15
- Inventor: Ethan H. Cannon , AJ KleinOsowski , K. Paul Muller , Tak H. Ning , Philip J. Oldiges , Leon J. Sigal , James D. Warnock , Dieter Wendel
- Applicant: Ethan H. Cannon , AJ KleinOsowski , K. Paul Muller , Tak H. Ning , Philip J. Oldiges , Leon J. Sigal , James D. Warnock , Dieter Wendel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Carey, Rodriguez, Greenberg & O'Keefe
- Agent Steven M. Greenberg, Esq.
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
A method of determining one or more transistors within a particular circuit to be respectively replaced with a hardened transistor includes: identifying, as not requiring hardening, one or more transistors; identifying, as candidates for hardening, each transistor in the circuit not previously identified as not requiring hardening; and employing the hardened transistor in place of a transistor identified as a candidate for hardening. The circuit is a latch and the transistor is an SOI CMOS FET. The transistor is also an SOI transistor. The series transistor includes first and second series-connected transistors having a shared source/drain region whereby a drain of the first series-connected transistor is merged with a source of the second series-connected transistor.
Public/Granted literature
- US20110102042A1 APPARATUS AND METHOD FOR HARDENING LATCHES IN SOI CMOS DEVICES Public/Granted day:2011-05-05
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