Invention Grant
- Patent Title: Antenna and manufacturing method thereof, semiconductor device including antenna and manufacturing method thereof, and radio communication system
- Patent Title (中): 天线及其制造方法，包括天线的半导体装置及其制造方法以及无线通信系统
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Application No.: US11604583Application Date: 2006-11-27
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Publication No.: US08354962B2Publication Date: 2013-01-15
- Inventor: Tomoyuki Aoki
- Applicant: Tomoyuki Aoki
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2005-343012 20051129
- Main IPC: H01Q1/38
- IPC: H01Q1/38
Abstract:
An antenna includes a first substrate, a first pattern, a second substrate, a second pattern, and an anisotropic conductive material. The first substrate has an insulating surface. The first pattern is formed over the insulating surface of the first substrate, and made of a conductive material. The second substrate is provided so as to face the surface over which the first pattern of the first substrate is formed and has an insulating surface. The second pattern is formed over the insulating surface facing the first substrate of the second substrate, and made of a conductive material. The anisotropic conductive material electrically connects the first pattern and the second pattern. The whole region of the first pattern overlaps with the second pattern with the anisotropic conductive material interposed therebetween.
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