Invention Grant
- Patent Title: Semiconductor device with an inductor
- Patent Title (中): 具有电感的半导体器件
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Application No.: US12826080Application Date: 2010-06-29
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Publication No.: US08355229B2Publication Date: 2013-01-15
- Inventor: Shingo Sakai
- Applicant: Shingo Sakai
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-157656 20090702
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01C7/12 ; H02H1/00 ; H02H1/04 ; H02H3/22 ; H02H9/06
Abstract:
A semiconductor device including an electrostatic discharge element that protects the semiconductor device from electrostatic destruction is provided. The semiconductor device includes a first circuit, a second circuit, a connection node connecting the first node to the second node, and a first inductor connected between the connection node and a first power supply. The first inductor and the electrostatic discharge element are formed so that they vertically overlap each other.
Public/Granted literature
- US20110002076A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-01-06
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