Invention Grant
- Patent Title: Variable-resistance material memories, processes of forming same, and methods of using same
- Patent Title (中): 可变电阻材料存储器，其形成方法及其使用方法
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Application No.: US12986717Application Date: 2011-01-07
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Publication No.: US08355273B2Publication Date: 2013-01-15
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells can be arranged in parallel with a corresponding series of control gates. A select gate can also be disposed in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell can include turning off the corresponding control gate, while turning on all other control gates. Various devices can include such a variable-resistance material memory array.
Public/Granted literature
- US20110103129A1 VARIABLE-RESISTANCE MATERIAL MEMORIES, PROCESSES OF FORMING SAME, AND METHODS OF USING SAME Public/Granted day:2011-05-05
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