A semiconductor memory storage device is disclosed. This memory device has a plurality of storage cells for storing data; a plurality of access devices for allowing access to the corresponding plurality of storage cells, the plurality of access devices being arranged in at least two groups, each of the at least two groups being controlled by an access control line; access control circuitry for controlling a voltage level supplied to a selected one of at least two of the access control lines during access to the storage cell, the access control circuitry comprising a capacitor and switching circuitry; and control circuitry responsive to a data access request to access a selected storage cell to: connect a selected one of the access control lines to a voltage level to allow access via one of the access devices to the selected storage cell; and to control the switching circuitry of the access control circuitry to connect the capacitor of the access control circuitry to the selected access control line and thereby change the voltage level supplied to the selected access control line.