Invention Grant
- Patent Title: Biasing circuit and technique for SRAM data retention
- Patent Title (中): 用于SRAM数据保留的偏置电路和技术
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Application No.: US13008992Application Date: 2011-01-19
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Publication No.: US08355277B2Publication Date: 2013-01-15
- Inventor: Hong-Chen Cheng , Chih-Chieh Chiu , Hsu-Shun Chen , Chung-Ji Lu , Cheng Hung Lee , Hung-Jen Liao
- Applicant: Hong-Chen Cheng , Chih-Chieh Chiu , Hsu-Shun Chen , Chung-Ji Lu , Cheng Hung Lee , Hung-Jen Liao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C11/413
- IPC: G11C11/413 ; G11C5/14

Abstract:
A SRAM system includes: a SRAM cell array coupled between high and low supply nodes, a difference therebetween defining a data retention voltage (VDR) for a low power data retention mode; a main power switch coupling one of high and low supply nodes to a main power supply and disconnecting the one high and low supply nodes from the main power supply during the low power data retention mode; a monitor cell including a SRAM cell preloaded with a data bit and configured for data destruction responsive to a reduction in VDR before data destruction occurs in the SRAM cell array; and a clamping power switch responsive to data destruction in the monitor cell to couple the one of the high and low supply nodes to the main power supply.
Public/Granted literature
- US20120182792A1 BIASING CIRCUIT AND TECHNIQUE FOR SRAM DATA RETENTION Public/Granted day:2012-07-19
Information query
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