Invention Grant
- Patent Title: Flash memory having multi-level architecture
- Patent Title (中): 具有多级架构的闪存
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Application No.: US12764060Application Date: 2010-04-20
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Publication No.: US08355281B2Publication Date: 2013-01-15
- Inventor: Alessandro Grossi , Giulio Albini , Anna Maria Conti
- Applicant: Alessandro Grossi , Giulio Albini , Anna Maria Conti
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear, LLP
- Main IPC: G11C16/00
- IPC: G11C16/00
Abstract:
Subject matter disclosed herein relates to a multi-level flash memory and a process flow to form same.
Public/Granted literature
- US20110255334A1 FLASH MEMORY HAVING MULTI-LEVEL ARCHITECTURE Public/Granted day:2011-10-20
Information query
