Invention Grant
- Patent Title: Memory device with non-volatile memory buffer
- Patent Title (中): 具有非易失性存储器缓冲器的存储器件
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Application No.: US11955926Application Date: 2007-12-13
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Publication No.: US08356134B2Publication Date: 2013-01-15
- Inventor: Takafumi Ito , Hidetaka Tsuji
- Applicant: Takafumi Ito , Hidetaka Tsuji
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-338718 20061215
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28

Abstract:
A memory device includes a nonvolatile memory and a controller. The nonvolatile memory includes a storage area having a plurality of memory blocks each including a plurality of nonvolatile memory cells, and a buffer including a plurality of nonvolatile memory cells and configured to temporarily store data, and in which data is erased for each block. If a size of write data related to one write command is not more than a predetermined size, the controller writes the write data to the buffer.
Public/Granted literature
- US08145827B2 Memory device with non-volatile memory buffer Public/Granted day:2012-03-27
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