Invention Grant
US08356742B2 Method for manufacturing a semiconductor device using an Al-Zn connecting material
有权
使用Al-Zn连接材料制造半导体器件的方法
- Patent Title: Method for manufacturing a semiconductor device using an Al-Zn connecting material
- Patent Title (中): 使用Al-Zn连接材料制造半导体器件的方法
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Application No.: US13228169Application Date: 2011-09-08
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Publication No.: US08356742B2Publication Date: 2013-01-22
- Inventor: Osamu Ikeda , Masahide Okamoto
- Applicant: Osamu Ikeda , Masahide Okamoto
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-314168 20061121
- Main IPC: B23K31/00
- IPC: B23K31/00 ; B23K35/12

Abstract:
In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, a high connection reliability can be achieved when an Al series alloy layer is left after the connection, since the soft Al thereof functions as a stress buffer material.
Public/Granted literature
- US20120000965A1 CONNECTING MATERIAL, METHOD FOR MANUFACTURING CONNECTING MATERIAL AND SEMICONDUCTOR DEVICE Public/Granted day:2012-01-05
Information query
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