A method of removing photoresist beneath an overlayer includes estimating a rapid temperature change for a photoresist layer to produce cracking in the overlayer. The temperature chance is estimated so that the cracking of the overlayer is sufficient to allow a liftoff solution to penetrate below the overlayer during a liftoff step. The method further includes baking the photoresist layer and chilling the photoresist layer after baking to produce the rapid temperature change. The method then includes lifting off the photoresist layer using the liftoff solution.