Invention Grant
- Patent Title: Class of ferromagnetic semiconductors
- Patent Title (中): 铁磁半导体类
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Application No.: US12062076Application Date: 2008-04-03
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Publication No.: US08357309B2Publication Date: 2013-01-22
- Inventor: Larysa Shlyk , Sergly Alexandrovich Kryukov , Lance Eric De Long , Barbara Schüpp-Niewa , Rainer Niewa
- Applicant: Larysa Shlyk , Sergly Alexandrovich Kryukov , Lance Eric De Long , Barbara Schüpp-Niewa , Rainer Niewa
- Applicant Address: US KY Lexington
- Assignee: University of Kentucky Research Foundation
- Current Assignee: University of Kentucky Research Foundation
- Current Assignee Address: US KY Lexington
- Agency: Crowell & Moring LLP
- Main IPC: C01G55/00
- IPC: C01G55/00 ; C01G23/00 ; C01G23/04
Abstract:
Single crystal and polycrystal oxoruthenates having the generalized compositions (Baz,Sr1−z)FexCoyRu6−(x+y)O11 (1≦(x+y)≦5; 0≦z≦1) and (Ba,Sr)M2±xRu4∓xO11 (M=Fe,Co) belong to a novel class of ferromagnetic semiconductors with applications in spin-based field effect transistors, spin-based light emitting diodes, and magnetic random access memories.
Public/Granted literature
- US20080277748A1 Novel Class of Ferromagnetic Semiconductors Public/Granted day:2008-11-13
Information query
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